gap. The LEDs realized using two differently doped semiconductors that are the same material is called a homojunction. When they are realized using different. homojunction and heterojunction materials, cross sectional measurements are advantageous. . This includes the fabrication of LEDs, lasers, photodiodes, and . Major issues in regular (homojunction) LEDs: high concentration of electrons and holes is hardly achievable due to diffusion (the characteristic length of.

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The structure uses Zn as a p-type dopant. This page was last edited on 14 Augustat The abrupt junction is more resistive than the graded junction due to the electron barrier forming at the abrupt junctions after Schubert et al.

Dependence of the internal differential quantum efficiency emitted photons per injected electron on temperature for different p-type doping levels lev the cladding layer after Kazarinov and Pinto, Retrieved from ” https: P-n junction displacement process caused by excessive hpmojunction of the cladding region. The p-type confinement layer consists of a lightly doped layer close to the active region and a higher doped layer further away from the active layer adapted from Kazarinov and Pinto, This is not a necessary condition as the only requirement is that the same semiconductor same band gap is found on both sides of the junction, in contrast to a heterojunction.


The dark lines homojunctiin a cross-hatch pattern are due to misfit dislocations after Fitzgerald et al. P-n junction under a zero bias and b forward bias. Cathodo-luminescence image of a 0.

Chapter 4

Also shown is the carrier distribution in the active layer. Under forward bias conditions, minority carriers diffuse into the neutral re- gions where they recombine. In most practical cases a homojunction occurs at the interface between an n-type donor doped and p-type acceptor doped semiconductor such as siliconthis is called a p-n junction.

Band diagram of a an abrupt n-type-n-type heterojunction and homojubction a graded heterojunction of two semiconductors with different bandgap energy.

A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material, these materials have equal band gaps but typically have different doping. Illustration of a double heterostructure consisting of a bulk or quantum well active region and two homojuncttion layers.

This article does not cite any sources. Dependence of the luminous efficiency of an AlGaInP double heterostructure LED emitting at nm on the p-type confinement layer doping concentration after Sugawara et al. By using this site, you agree to the Terms of Use and Privacy Policy.


Illustration of two crystals with mismatched lattice constant resulting in dislocations at or near the interface between the two semiconductors. Views Read Edit View history.

Band diagram of a an abrupt double heterostructure and b a graded double heterostructure.

An lex to n-type junction, for example, would be considered a homojunction if the doping levels are different. Part a shows no p-n junction displacement. Dependence of the luminous efficiency of an AlGaInP double heterostructure LED emitting at nm on the active layer doping concentration after Sugawara et al.

December Learn how and when to remove this template message. In homojunctions, carriers are distributed over the diffusion length.

Band diagram of a forward-biased double heterostructure. The confinement layers are frequently called cladding layers. Carrier capture and escape in a double hetero- structure. Room-temperature current-voltage characteristics of p-n junctions made from different semiconductors.

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Articles lacking sources from December All articles lacking sources. Methods for evaluating diode series resistance.

The figure reveals an optimum active region thickness of 0.