Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.
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Fundamentals of Modern VLSI Devices – Yuan Taur, Tak H. Ning – Google Books
Yuan TaurTak H. Bipolar device design; 8. The authors highlight the intricate interdependencies and subtle trade-offs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. Now the second edition comes with timely updates and two new chapters, which continue the tradition of emphasizing the design aspects of modern VLSI devices.
I stronly recommend you to read and read again. I rate 2 star for its binding quality.
Fundamentals of Modern VLSI Devices
Chris Zeh rated it liked it Jun 27, This is too concise for the beginner to understand but it is good for an engineer involved in this field for several years. The feel you get when you read the book is somewhat hard to write, it has all the relevant equations but lacks a physical insight. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device vlso and scaling limits of CMOS and fundamenrals devices.
They are in fact the insight from author’s tens of years of device design experience. Deepu marked it as to-read Jul 02, Taur has a few papers, available online for free download at IBM’s research and development journal,it will be a good idea to explore it and the other allied material appearing there.
Joel rated it really liked it Dec 29, This makes the book invaluably useful in practical transitor design as well as in the classroom. Mayee marked it as to-read Apr 16, Watson Research Center where he won numerous invention and achievement awards. Modern Semiconductor Devices for Integrated Circuits. Get to Know Us. I must revise my previous comment about this book.
Trivia About Fundamentals of M I keep it on my desk at all times. Description This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance.
As a suggestion Dr. For example the quantum confinement of the inversion layer is so briefly described that someone reading the topic for the first time will never be able to make sense out of it.
Adrien Maciel marked it as to-read Jun 15, Pejman Khosropour rated it liked it Feb 06, But it may be too simplified for the people who want to know all the details and physical origins. Both the ideas and the presentation are first-rate.
Fundamentals of Modern VLSI Devices : Yuan Taur :
If you are a seller for this product, would you like to suggest updates through seller support? Vignesh Reviraj marked it as to-read Apr 30, Carol Andserson rated it it was amazing Feb 19, Thanks for telling us about the problem. Please try again vosi.
Benjamin Gojman added it May 21, CMOS performance factors; 6.