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Erasable Programmable Read-Only Memory. For dual control pin devices, it must be hold true that both are not 0 at the same time.

The erasure time is increased by the square of the distance if the distance is doubled the datashet time goes up epeom a factor of 4. Memory Epom ROMs cont: In- complete erasure will cause symptoms that can be misleading. This exposure discharges the floating gate to its initial state through induced photo current. Maintains its state when powered down. Program Verify Mode The programming of the MME may be verified either 1 word at a time during the programming as shown in the timing diagram or by reading all of the words out at the end of the programming sequence.

Multiple pulses are not needed but will not cause device damage. Field programmable but only once. This is done 8 bits a byte at a time. The data pins are typically bi-directional in read-write memories. If more than one are present, then all must be 0 in order to perform a read or write. The programming sequence is: All input voltage levels, including datahseet program pulse on chip-enable are TTL compatible. All bits will be at a “1” level output high in this initial state and after any full erasure.


The board has DRAMs mounted on both sides and is pins. Typical conditions are for operation at: Lamps lose intensity as they age.

Memory Chips The number of address pins is related to the number of memory locations. The pin and pin SIMMs are not used on these systems. More on this later.

The MME is packaged in a pin dual-in-line package with transparent lid. An opaque coating paint, tape, label, etc. Factory programmed, cannot be changed.

2716 EPROM

Memory Chips Each memory device dafasheet at least one control pin. Capacitance Is guaranteed by periodic testing. Therefore, between 10 and 28 address pins are present. No pins should be left open.

Common sizes today are 1K to M locations. A new pattern can then be written into the device by following the programming procedure. This refresh is performed by a special circuit in the DRAM which refreshes the entire memory using reads.

Each memory device has at least one chip select CS or chip enable CE or select S pin that enables the memory device. Refresh also occurs on a normal read, write or during a special refresh cycle. Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem. Writing is much slower than a normal RAM. Reprogramming requires up to 20 minutes of high-intensity UV light exposure.


It is recommended that the MME be kept out of direct sunlight. There are several forms: To prevent damage the device it must not be inserted into a board with power applied.

EPROM Datasheet

Search the history of over billion web pages on the Internet. The table of “Electrical Characteristics” provides datashert for actual device operation. The OE pin enables and disables a set of tristate buffers.

Datasyeet expo- sure to room level fluorescent lighting will also cause erasure. Catalog listing of 1K X 8 indicate a byte addressable 8K memory. The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of time.

Direct sunlight any intense light can cause temporary functional fail- ure due to generation of photo current. These are shown in Table I. An erasure system should be datasyeet periodically. Memory Types Two basic types: When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring.